Black SiC project (750 KDKK) is supported by the Danish Ministry of Higher Education and Science through the proof of concept program.
Project description
The “Black Silicon carbide” project is aiming to develop a simple, cost-efficient and scalable method in order to produce highly antireflective nanostructures on silicon carbide (SiC). Silicon carbide (SiC) is a strong candidate for several optoelectronic applications such as solar cells and light emitting diodes (LEDs). The implementation of antireflective nanostructures on the SiC surface can increase drastically the efficiency of such devices, by suppressing the total internal reflection loss, arising from the abrupt refractive index difference between SiC and the surroundings. The nanofabrication is performed at Denmark’s National Center for Micro- and Nano-fabrication (Danchip).
Project participants:
- DTU Fotonik, Technical University of Denmark
Project duration: 2012.09 to 2013.08.