SiC4LED project (2.7 MNOK, 2016-2017) is supported by the Research Council of Norway (No. 254979).
Project description:
The research project will focus on the fundamental study on the growth of the novel fluorescent silicon carbide crystals by the liquid solution phase epitaxial technology. The LPE method is able to grow the Al-N co-doped monocrystalline SiC. The project will be carried out with respect to the
following two parts:
1. Laboratory investigation of the LPE growth of Al-N co-doped SiC crystals.
2. The laboratory grown Al-N co-doped SiC samples will be further optically characterized by photoluminescence efficiency measurements in order to examine the feasibility for the fabrication of monolithic white LED.
Project participants:
- SNITEF, Norway
- DTU Fotonik, Technical University of Denmark